合肥工业大学电子科学与应用物理学院导师介绍:揭建胜
姓名:揭建胜 性别:男 出生年月: 职称:研究员 学院:电子科学与应用物理学院 研究方向:低
姓名:揭建胜
性别:男
出生年月:
职称:研究员
学院:电子科学与应用物理学院
研究方向:低维半导体可控合成与表征;半导体纳米结构电输运;纳米光电子器件.传感器件;新型微纳器件;纳米器件集成与应用;纳米显示技术。
简 历 | |
1995-1999年中国科技大学物理系本科,2004年于中国科技大学物理系获理学博士学位,其后进入香港大学与香港城市大学物理及材料科学系超金刚石及先进薄膜研究中心从事博士后工作;2006年以人才引进加入合肥工大,任研究员,博导。长期致力于低维半导体纳米结构的制备.表征及应用研究,以及探索纳米材料在新一代电子.光电.传感器等领域的应用,取得多项具有创新性的研究成果,受到广泛关注。在国际重要刊物发表论文近60篇,引用1200多次,并多次在国际国内会议上报告研究工作。担任Appl. Phys. Lett..J. Phys. Chem. C.Mater. Chem. Phys.等国际期刊审稿人。主持或参与了国家自然科学基金.教育部人才计划.863.973等多项国家级研究项目。现任职校分析测试中心咨询委员会委员,电子科学与应用物理学院学术委员会委员,以及微纳功能材料与器件实验室负责人。 | |
研究方向 | |
主要研究方向: 低维半导体可控合成与表征;半导体纳米结构电输运;纳米光电子器件.传感器件;新型微纳器件;纳米器件集成与应用;纳米显示技术。 主要研究课题: 1.2008年度教育部新世纪优秀人才计划基于低维半导体纳米结构新型微纳器件的设计.构建与应用研究,NCET-08-0764,主持。 2.国家自然科学青年基金基于准一维半导体高性能场效应器件的研究,60806028,主持。 3.合肥工业大学校创新群体新型微纳器件,2009HGCX0232,主持。 4.中国高技术研究发展计划(国家863计划)基于II-VI族半导体纳米结构的光电子器件研究,2007AA03Z301,副组长。 5.国家重点基础研究发展计划(973计划)硅纳米结构的控制生长及相关应用基础研究,2006CB933000,参与子课题。 |
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教学工作 | |
主讲研究生课程《纳米电子材料与器件》 | |
获奖情况 | |
微纳功能材料与器件实验室主页: [url]Http://nano.hfut.edu.cn[/url] 欢迎有志于纳米科技的同学报考硕士.博士研究生。 |
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主要论著 | |
[1]Jiansheng Jie, W. J. Zhang, I. Bello, C. S. Lee, S. T. Lee, “One-dimensional II-VI nanostructures: Synthesis, properties and optoelectronic applications, Nano Today 5(4), 313-336 (2010) (Review Paper). [2]Jiansheng Jie, Wenjun Zhang, Yang Jiang, Xiangmin Meng, Yanqing Li, S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons, Nano Letters 6, 1887-1892 (2006).(Highlighted by Nature China) [3]Jiansheng Jie, Wenjun Zhang, Kuiqing Peng, Guodong Yuan, Chun-Sing Lee,and Shuit-Tong Lee, “The surface-dominated transport properties of silicon nanowires, Adv. Funct. Mater. 18, 3251-3257 (2008). [4]Jiansheng Jie, Wenjun Zhang, Yang Jiang, S. T. Lee, “Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications, Appl. Phys. Lett. 89, 133118 (2006). [5]Jiansheng Jie, Wenjun Zhang, Yang Jiang, S. T. Lee, “Transport properties of single-crystal CdS nanoribbons, Appl. Phys. Lett. 89, 223117 (2006). [6]Jiansheng Jie, Guanzhong Wang, Yiming Chen, Xinhai Han, Qingtao Wang, and J. G. Hou. “Synthesis and optical properties of the well-aligned ZnO nanorods on undoped ZnO film, Appl. Phys. Lett. 86, 031909 (2005). (Highlighted by Nature China) [7]Jiansheng Jie, Guanzhong Wang, Xinhai Han, Gongpu Li, and J. G. Hou. “Synthesis and Characterization of ZnO:In nanowires with superlattice structure, J. Phys. Chem. B 108, 17027-17031 (2004). [8]Jiansheng Jie, Guanzhong Wang, Xinhai Han, Jieping Fang, Qingxuan Yu, Yuan Liao, Bo Xu, Qingtao Wang, Rongchuan Fang, J. G. Hou. “Growth of ternary oxide nanowires by Au-catalyzed vapor-phase evaporation, J. Phys. Chem. B 108, 8249-8253 (2004). [9]Jiansheng Jie, Guanzhong Wang, Qingtao Wang,Yiming Chen, Xinhai Han, Xiaoping Wang, and J. G. Hou. “Synthesis and characterizations of well aligned ZnO nanorods on porous aluminum oxide template, J. Phys. Chem. B 108, 11976-11980 (2004). [10]Jiansheng Jie, Chunyan Wu, Yongqiang Yu, Li Wang and Zhizhong Hu,“Gallium-assisted growth of flute-like MgO nanotubes, Ga2O3-filled MgO nanotubes, and MgO/Ga2O3 co-axial nanotubes,Nanotechnology 20, 075602 (2009). (Reported by Nanotechweb.org in Lab Talk) [11] Jiansheng Jie, Wenjun Zhang, Yang Jiang, Xiangmin Meng, J. A. Zapien, M. W. Shao, S. T. Lee, “Heterocrystal and bicrystal structures of ZnS nanowires synthesized by plasma enhanced chemical vapour deposition, Nanotechnology 17, 2913-2917 (2006). [12] Jiansheng Jie, Guanzhong Wang, Xinhai Han, Qingxuan Yu, Yuan Liao, Gongpu Li, and J. G. Hou. “Indium-doped zinc oxide nanobelts, Chem. Phys. Lett. 387, 466-470 (2004). (2003-2007, Chem. Phys. Lett. Top-50 most cited articles). [13] Jiansheng Jie, Guanzhong Wang, Xinhai Han, Jieping Fang, Bo Xu, Qingxuan Yu, Yuan Liao, Fanqing Li, and J. G. Hou. “Growth and properties of well-aligned ZnO hexagonal cones prepared by carbonthermal reaction, J. Crystal Growth 267, 223-230 (2004). [14] L. Wang, Jiansheng Jie*, C. Y. Wu, Z. Wang, Y. Q. Yu, Q. Peng, X. W. Zhang, Z. Z. Hu, D. Wu, H. E. Guo, Y. Jiang, “Coaxial ZnSe/Si nanocables with controlled p-type shell doping, Nanotechnology 21 (28), 285206 (2010). [15] Di Wu, Jiang Yang, Li Wang, Shanying Li, Bo Wu, Yongqiang Yu, Chunyan Wu, Jiansheng Jie*, “High-performance CdS:P nanoribbon field-effect transistors constructed with high-κ dielectric and top-gate geometry, Appl. Phys. Lett. 96 (12), 123118 (2010). [16] Shanying Li, Yang Jiang, Di Wu, Li Wang, Bo Wu, Xinzheng Lan, Yongqing Yu, Zhuangxing Wang, Jiansheng Jie*, “Enhanced p-type conductivity of ZnTe nanoribbons by nitrogen doping, J. Phys. Chem. C 114 (17), 7980-7985 (2010). [17] Xiujuan Zhang, Jiansheng Jie, Wenfeng Zhang, Linbao Luo, Zhubin He, Chengyi Zhang, Xiaohong Zhang, Wenjun Zhang, Chun-Sing Lee, and Shuit-Tong Lee, “Photoconductivity of a single small molecular organic nanowire, Adv. Mater. 20, 2427 (2008). [18] Zhubing He, Jiansheng Jie, Wenjun Zhang, Wenfeng Zhang, Linbao Luo, Xia Fan, Guodong Yuan, Igor Bello, and Shuit-Tong Lee, “Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping, Small 5, 345-350 (2009). [19] L. B. Luo, Jiansheng Jie, W. F. Zhang, Z. B. He, J. X. Wang, G. D. Yuan, W. J. Zhang, L. C. M. Wu, and S. T. Lee, “Silicon nanowire sensors for Hg2+ and Cd2+ ions, Appl. Phys. Lett. 94, 193101 (2009). [20] Wenfeng Zhang, Jiansheng Jie, Zhubing He, Silu Tao, Xia Fan, Yechun Zhou, Guodong Yuan, Linbao Luo, Chun-Sing Lee, Wenjun Zhang, and Shuit-Tong Lee, “Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode, Appl. Phys. Lett. 92, 153312 (2008). [21] Wenfeng Zhang, Jiansheng Jie, Linbao Luo, Guodong Yuan, Zhubing He, Zhiqiang Yao, Zhenhua Chen, Chun-Sing Lee, Wenjun Zhang, and Shuit-Tong Lee, “Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device, Appl. Phys. Lett. 93, 183111 (2008). [22] Kuiqing Peng, Jiansheng Jie, Wenjun Zhang, and Shuit-Tong Lee, “Silicon nanowires for rechargeable lithium-ion battery anodes, Appl. Phys. Lett. 93, 033105 (2008). [23] Guodong Yuan, Wenjun Zhang, Jiansheng Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, S. T. Lee, “P-type ZnO Nanowire Arrays, Nano Lett. 8, 2591-2597 (2008). [24] Guodong Yuan, Wenjun Zhang, Jiansheng Jie, Xia Fan, Jinxin Tang, Ismathullakhan Shafiq, Zhizhen Ye, Chun-Sing Lee, and Shuit-Tong Lee, “Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays, Adv. Mater. 20, 168-173 (2008). [25] Yang Jiang, Wenjun Zhang, Jiansheng Jie, Xiangmin Meng, J. A. Zapien, S. T. Lee, “Homoepitaxial growth and lasing properties of ZnS nanowire and nanoribbon arrays, Adv. Mater. 18, 1527-1532 (2006). [26]Yang Jiang, Wenjun Zhang, Jiansheng Jie, Xiangmin Meng, Xia Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors, Adv. Funct. Mater. 17, 1795-1800 (2007). |
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